Solid-state image pickup element, method of manufacturing the same, and image pickup apparatus including the same

ABSTRACT

An embodiment of the invention provides a solid-state image pickup element, including: a semiconductor layer having a photodiode, photoelectric conversion being carried out in the photodiode; a silicon oxide film formed on the semiconductor layer in a region having at least the photodiode by using plasma; and a film formed on the silicon oxide film and having negative fixed charges.

This is a continuation of application Ser. No. 12/691,560, filed Jan.21, 2010, the entire contents being incorporated by reference. Thepresent application claims priority to Japanese Patent Application JP2009-051208 filed with the Japanese Patent Office on Mar. 4, 2009, theentire content of which is hereby incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a solid-state image pickup element, amethod of manufacturing the same, and an image pickup apparatusincluding the same.

2. Description of the Related Art

It is known that in a CCD solid-state image pickup element and a CMOSsolid-state image pickup element, crystal defects in a photodiode, andinterface states in an interface between a light receiving portionformed on a silicon substrate, and an insulating layer formed on thelight receiving portion cause a dark current.

FIG. 13A is a schematic cross sectional view explaining the case wherean insulating layer is formed on a silicon layer having a photodiodeformed therein. FIG. 13B is an energy diagram of the structure shown inFIG. 13A. As shown in FIGS. 13A and 13B, interface states each indicatedby a mark x occur in an interface between a silicon layer 51 having aphotodiode PD formed therein, and an insulating layer 52 formed on thesilicon layer 51. These interface states become a generation source of adark current, and electrons originating in the interface are caused toflow in the form of the dark current into the photodiode PD.

In order to cope with this situation, a so-called Hole AccumulationDiode (HAD) structure is adopted as a technique for controlling thegeneration of the dark current. This technique, for example, isdescribed in Japanese Patent Laid-Open No. 2005-123280 (referred to asPatent Document 1 hereinafter).

FIG. 14A is a schematic cross sectional view explaining the case wherean HAD structure is obtained by forming a p⁺-type semiconductor region.FIG. 14B is an energy diagram of the HAD structure shown in FIG. 13A.Specifically, as shown in FIGS. 14A and 14B, a p-type impurity isintroduced into the neighborhood of a surface of a silicon layer 51 toform a p⁺-type semiconductor region, and the resulting p⁺-typesemiconductor region is made a positive charge accumulation region 53for accumulating therein positive charges (holes).

The HAD structure is obtained in which the positive charge accumulationregion 53 is formed in the interface of the silicon layer 51 in such amanner, whereby the photodiode PD is kept away from the interface,thereby making it possible to suppress the generation of the darkcurrent with the interface states as the generation source.

In general, in forming the HAD structure, ions such as B ions or BF₂ions are implanted into the silicon layer 51 at an anneal temperature,thereby forming the p⁺-type semiconductor region becoming the positivecharge accumulation region 53 in the neighborhood of the interface ofthe silicon layer 51.

Also, it is essential for an existing ion implantation process that forthe purpose of realizing the proper diffusion and activation of the ionsimplanted, a high temperature is held for as long a time period aspossible.

However, holding the high temperature for a long time period is notdesirable from a viewpoint of sufficiently ensuring the characteristicsor the like of the solid-state image pickup element.

FIG. 15A is a schematic cross sectional view explaining the case wherean insulating layer having negative fixed charges is formed on a siliconlayer having a photodiode formed therein. FIG. 15B is an energy diagramof the structure shown in FIG. 14A. As shown in FIGS. 15A and 15B, thereis proposed a technique for forming an insulating layer 55 havingnegative fixed charges 54 on the silicon layer 51 having the photodiodePD formed therein. This technique, for example, is described in JapanesePatent Laid-Open No. 2008-306154 (referred to as Patent Document 2hereinafter).

According to this technique, even when as shown in FIG. 15B, the ionsare not implanted into the silicon layer 51 in a state in which a bandis bent, the positive charge accumulation region 53 is formed in theneighborhood of the interface of the silicon layer 51, thereby making itpossible to accumulate the positive charges (holes) in the positivecharge accumulation region 53.

HfO₂, ZrO₂, Al₂O₃, TiO₂, Ta₂O₅ or the like, for example, is given as amaterial for the insulating layer 55 having such negative fixed charges54.

SUMMARY OF THE INVENTION

With the technique described in Patent Document 2, in depositing theinsulating layer 55 having the negative fixed charges 54, a first filmdeposited by utilizing either an atomic layer deposition (ALD) method ora metal organic chemical vapor deposition (MOCVD) method, and a secondfilm deposited by utilizing a physical vapor deposition (PVD) method arelaminated in order.

According to that technique, the generation of the interface states canbe suppressed by utilizing the ALD method, and the productivity can beenhanced by utilizing the PVD method.

With the manufacturing method proposed in Patent Document 2, however,since the same oxides are laminated and formed by utilizing thedifferent two kinds of depositing methods, the characteristics of theinsulating layer 55 having the negative fixed charges 54 are restrictedby the oxide used.

In addition, the material which is hardly deposited by utilizing the ALDmethod may not be used in the insulating layer 55 having the negativefixed charges 54. From this viewpoint as well, the characteristics ofthe insulating layer 55 having the negative fixed charges 54 arerestricted.

The present invention has been made in order to solve the problemsdescribed above, and it is therefore desirable to provide a solid-stateimage pickup element in which generation of a dark current can besuppressed, and a restriction of characteristics of a layer havingnegative fixed charges can be relaxed, a method of manufacturing thesame, and an image pickup apparatus including the same.

In order to attain the desire described above, according to anembodiment of the present invention, there is provided a solid-stateimage pickup element including: a semiconductor layer having aphotodiode formed therein, photoelectric conversion being carried out inthe photodiode; a silicon oxide film formed on the semiconductor layerin a region having at least the photodiode formed therein by usingplasma; and a film formed on the silicon oxide film and having negativefixed charges.

According to another embodiment of the present invention, there isprovided a method of manufacturing a solid-state image pickup elementincluding the steps of: forming a photodiode in a semiconductor layer;forming a silicon oxide film on the semiconductor layer in a regionhaving at least the photodiode formed therein by using plasma; andforming a film having negative fixed charges on the silicon oxide film.

According to still another embodiment of the present invention, there isprovided an image pickup apparatus including: a condensing opticalportion for condensing an incident light; a solid-state image pickupelement having a semiconductor layer having a photodiode formed therein,photoelectric conversion being carried out in the photodiode, a siliconoxide film formed on the semiconductor layer in a region having at leastthe photodiode formed therein by using plasma, and a film formed on thesilicon oxide film and having negative fixed charges, the solid-stateimage pickup element serving to receive the incident light condensed bythe condensing optical portion, thereby carrying out photoelectricconversion for the incident light; and a signal processing portion forprocessing a signal obtained through the photoelectric conversion in thesolid-state image pickup element.

With the structure of the solid-state image pickup element according tothe embodiment of the present invention, the formation of the filmhaving the negative fixed charges results in that a positive chargeaccumulation region is formed in the neighborhood of an interface (theneighborhood of a surface) of the semiconductor layer having thephotodiode formed therein, thereby making it possible to accumulate thepositive charges (holes) in the positive charge accumulation region. Asa result, it is possible to suppress the generation of the dark currentcaused by the interface states.

In addition, since the silicon oxide film formed by using the plasma canalso be given the negative fixed charges, the sufficient negative biaseffect can be obtained in combination of the silicon oxide film and thefilm having the negative fixed charges and formed on the silicon oxidefilm.

Also, since the silicon oxide film has the negative fixed charges, thefilm having the negative fixed charges can be made close to theinterface of the silicon layer as compared with the case where a siliconoxide film (such as a thermally-oxidized film) having no negative fixedcharges is formed.

Moreover, since the silicon oxide film has the negative fixed chargesand thus is made a base film for preventing the semiconductor layer frombeing damaged in forming the film having the negative fixed charges. Asa result, unlike the case of the technique described in Patent Document2, the same oxide materials do not have to be laminated by utilizing thedifferent two film deposing methods, and thus the restrictions of themethod of depositing the film having the negative fixed charges, and thematerial for the film having the negative fixed charges are relaxed.

With the constitution of the method of manufacturing a solid-state imagepickup element according to the another embodiment of the presentinvention, the silicon oxide film having the negative fixed charges canbe formed on the photodiode in the step of forming the silicon oxidefilm on the semiconductor layer in the region having at least photodiodeformed therein by using the plasma.

In addition, the silicon oxide film and the film having the negativefixed charges compose the structure that the positive charges (holes)can be accumulated in the neighborhood of the interface (in theneighborhood of the surface) of the semiconductor layer having thephotodiode formed therein in the step of forming the film having thenegative fixed charges on the silicon oxide film. As a result, it ispossible to suppress the generation of the dark current caused by theinterface states in the interface of the semiconductor layer.

Also, since the silicon oxide film is formed as the base of the filmhaving the negative fixed charges, the silicon oxide film can preventthe semiconductor layer from being damaged in forming the film havingthe negative fixed charges. As a result, unlike the case of thetechnique described in Patent Document 2, the same oxide materials donot have to be laminated by utilizing the different two film depositingmethods, and thus the restrictions of the method of deposing the filmhaving the negative fixed charges, and the material for the film havingthe negative fixed charges are relaxed.

With the configuration of the image pickup apparatus according to thestill another embodiment of the present invention, since the solid-stateimage pickup element of the embodiment composes the image pickupapparatus of the still another embodiment, it is possible to suppressthe generation of the dark current.

As set forth hereinabove, according to the image pickup element and themethod of manufacturing the same of the present invention, it ispossible to suppress the generation of the dark current caused by theinterface states in accordance with the effect of the negative biashaving the sufficient magnitude.

Therefore, it is possible to realize the solid-state image pickupelement which has the high reliability, and which operates stablywithout generating the dark current.

In addition, since the silicon oxide film becoming the base of the filmhaving the negative fixed charges has the negative fixed charges, therestrictions of the method of deposing the film having the negativefixed charges, and the material for the film having the negative fixedcharges are relaxed. Thus, the restriction of the characteristics of thefilm having the negative fixed charges is also relaxed.

According to the image pickup apparatus of the present invention, sincethe generation of the dark current can be suppressed in the solid-stateimage pickup element, the signal obtained through the photoelectricconversion in the solid-state image pickup element is stabilized.

Therefore, it is possible to realize the highly reliable image pickupapparatus which stably operates and in which the satisfactory imagequality is obtained.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic cross sectional view showing a structure of asolid-state image pickup element according to an embodiment of thepresent invention;

FIG. 2 is a schematic cross sectional view showing a process in a methodof manufacturing the solid-state image pickup element shown in FIG. 1according to another embodiment of the present invention;

FIG. 3 is a schematic cross sectional view showing a process in a methodof manufacturing the solid-state image pickup element shown in FIG. 1according to the another embodiment of the present invention;

FIG. 4 is a schematic cross sectional view showing a process in a methodof manufacturing the solid-state image pickup element shown in FIG. 1according to the another embodiment of the present invention;

FIG. 5 is a schematic cross sectional view showing a process in a methodof manufacturing the solid-state image pickup element shown in FIG. 1according to the another embodiment of the present invention;

FIG. 6 is a schematic cross sectional view showing a process in a methodof manufacturing the solid-state image pickup element shown in FIG. 1according to the another embodiment of the present invention;

FIG. 7 is a schematic cross sectional view showing a process in a methodof manufacturing the solid-state image pickup element shown in FIG. 1according to the another embodiment of the present invention;

FIG. 8 is a schematic cross sectional view showing a process in a methodof manufacturing the solid-state image pickup element shown in FIG. 1according to the another embodiment of the present invention;

FIG. 9 is a schematic cross sectional view showing a process in a methodof manufacturing the solid-state image pickup element shown in FIG. 1according to the another embodiment of the present invention;

FIG. 10 is a graph showing a relationship between a gate voltage and acapacitance obtained through a C-V measurement about a Test ElementGroup (TEG);

FIG. 11 is a graph showing a relationship between a thickness of a SiO₂film formed by using plasma processing, and a flat band voltage of theSiO₂ film;

FIG. 12 is a schematic block diagram showing a configuration of an imagepickup apparatus according to still another embodiment of the presentinvention;

FIGS. 13A and 13B are respectively a schematic cross sectional view andan energy diagram each explaining the case where an insulating layer isformed on a silicon layer having a photodiode formed therein;

FIGS. 14A and 14B are respectively a schematic cross sectional view andan energy diagram each explaining the case where a p⁺-type semiconductorregion is formed on the silicon layer having the photodiode formedtherein to obtain an HAD structure; and

FIGS. 15A and 15B are respectively a schematic cross sectional view andan energy diagram each explaining the case where an insulating layerhaving negative fixed charges is formed on the silicon layer having aphotodiode formed therein through the p⁺-type semiconductor region.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The preferred embodiments of the present invention will be described indetail hereinafter with reference to the accompanying drawings.

It is noted that the description will now be given in accordance withthe following order.

1. Outline of the Present Invention

2. Solid-State Image Pickup Element

3. Method of Manufacturing Solid-State Image Pickup Element

4. Experiments (Measurements about Characteristics)

5. Image Pickup Apparatus

<1. Outline of the Present Invention>

In the present invention, a silicon oxide film formed by using plasma isprovided on a semiconductor layer in a region in which at least aphotodiode is formed in a solid-state image pickup element including thesemiconductor layer having the photodiode formed therein in whichphotoelectric conversion is carried out.

In addition, a film having negative fixed charges contained therein isprovided on the silicon oxide film, thereby structuring the solid-stateimage pickup element.

“A silicon oxide film formed by using plasma” literally means a siliconoxide film deposited by using plasma.

Although various film depositing methods each using the plasma areexpected as the method of depositing the silicon oxide film, preferably,a film depositing method is used with which the plasma is generated at alow temperature near a room temperature.

For example, the plasma is generated at the low temperature by using aDecoupled Plasma Source (DPS) system, thereby making it possible todeposit the silicon oxide film (SiO₂ film).

The silicon oxide film (SiO₂ film) is deposited by using the plasma,thereby making it possible to give the silicon oxide film (SiO₂ film)the negative fixed charges.

A material selected from the group including of a hafnium oxide (HfO₂),a zircon oxide (ZrO₂), an aluminum oxide (Al₂O₃), a titanium oxide(TiO₂), and a tantalum oxide (Ta₂O₅), for example, is given as thematerial for the film having the negative fixed charges containedtherein. Since the film made of any of those oxides has been used in agate insulating film or the like of an insulated gate field-effecttransistor, the film depositing method thereof is established, and thusthat film can be readily deposited.

When HfO₂ (refractive index: 2.05), Ta₂O₅ (refractive index: 2.16), TiO₂(refractive index: 2.20) or the like, having a relatively highrefractive index, of those materials is especially used, it is alsopossible to obtain an antireflection effect.

With regard to materials other than those materials described above, forexample, oxides of rare earth elements are given. That is to say, thereare given oxides of lanthanum, praseodymium, cerium, neodymium,promethium, samarium, europium, gadolinium, terbium, dysprosium,holmium, erbium, thulium, ytterbium, lutetium, and yttrium.

In addition, it is also possible to use any of a hafnium nitride, analuminum nitride, a hafnium oxynitride, and an aluminum oxynitride.

Silicon (Si) or nitrogen (N) may be added to the film having thenegative fixed charges contained therein unless an insulating propertyis impaired. A concentration of silicon or nitrogen added is suitablydetermined so as not to impair the insulating property of the film.Silicon or nitrogen is added to the film having the negative fixedcharges contained therein in such a manner, thereby making it possibleto enhance a heat resistance property of the film, and to enhance acapability of blocking ion implantation during the process.

The film having the negative fixed charges contained therein ispreferably formed by utilizing any one of the atomic layer deposition(ALD) method, the metal organic chemical vapor deposition (MOCVD) methodand the physical vapor deposition (PVD) method.

When the film is deposited by utilizing the ALD method, the depositioncondition, for example, is set in such a way that a substratetemperature is in the range of 200 to 500° C., a flow rate of aprecursor is in the range of 10 to 500 sccm, a radiation time period forthe precursor is in the range of 1 to 15 seconds, and a flow rate of O₃is in the range of 5 to 50 sccm.

When the film having the negative fixed charges contained therein isdeposited by utilizing the MOCVD method, the deposition condition, forexample, is set in such a way that the substrate temperature is in therange of 200 to 600° C.

Also, when the film having the negative fixed charges contained thereinis deposited by utilizing the PVD method, the deposition condition, forexample, is set in such a way that a pressure is in the range of 0.01 to50 Pa, a D.C. power is in the range of 500 to 2,000 W, a flow rate of Aris in the range of 5 to 50 sccm, and a flow rate of O₂ is in the rangeof 5 to 50 sccm.

For the purpose of obtaining an effect of suppression of tunneling ofthe electrons to a certain extent, preferably, a thickness of thesilicon oxide film is set as 1 nm or more. More preferably, thethickness of the silicon oxide film is set as 3 nm or more so that thesufficient effect of suppression of the tunneling of the electrons isobtained.

The effect of suppression of the tunneling of the electrons isstrengthened as the thickness of the silicon oxide film is increased.However, when the thickness of the silicon oxide film is made too thick,an effect of accumulation of the positive charges (holes) owing to thenegative fixed charges is weakened. From this viewpoint, preferably, thethickness of the silicon oxide film is set as 30 nm or less.

In the present invention, since the film having the negative fixedcharges contained therein is formed on the silicon oxide film formed byusing the plasma, the silicon oxide film formed by using the plasma canalso be given the negative fixed charges. As a result, the sufficientnegative bias effect is obtained in combination of the silicon oxidefilm, and the film having the negative fixed charges contained thereinformed on the silicon oxide film.

Also, since the silicon oxide film has the negative fixed charges, thefilm having the negative fixed charges contained therein can be madeclose to the interface of the semiconductor layer as compared with thecase where a silicon oxide film (such as a thermally-oxidized film)having no negative fixed charge is formed.

Moreover, the silicon oxide film has the negative fixed chargescontained therein and thus is made a base film for preventing thesemiconductor layer from being damaged in forming the film having thenegative fixed charges contained therein. As a result, the same oxidematerials do not have to be laminated by utilizing the different twofilm depositing methods, and thus the restrictions of the method ofdepositing the film having the negative fixed charges contained therein,and the material for the film having the negative fixed chargescontained therein are relaxed.

Therefore, according to an embodiment of the present invention, it ispossible to suppress the generation of the dark current caused by theinterface states in accordance with the effect of the negative biashaving the sufficient magnitude. Therefore, it is possible to realizethe solid-state image pickup element which has the high reliability, andwhich operates stably without generating the dark current. In addition,the restrictions of the method of depositing the film having thenegative fixed charges contained therein, and the material for the filmhaving the negative fixed charges contained therein are relaxed. Thus,the restriction of the characteristics of the film having the negativefixed charges contained therein is also relaxed.

Also, the image pickup apparatus of the present invention is configuredso as to include the solid-state image pickup element of the presentinvention. As a result, since the generation of the dark current can besuppressed in the solid-state image pickup element, the signal obtainedthrough the photoelectric conversion in the solid-state image pickupelement is stabilized. Therefore, it is possible to realize the highlyreliable image pickup apparatus which stably operates and in which thesatisfactory image quality is obtained.

<2. Solid-State Image Pickup Element>

FIG. 1 is a schematic cross sectional view showing a structure of asolid-state image pickup element according to an embodiment of thepresent invention.

The embodiment of the present invention corresponds to the case thepresent invention is applied to a so-called back surface radiation typeCMOS solid-state image pickup element (CMOS image sensor).

In the CMOS solid-state image pickup element 1, in a silicon substrate 2in a photodiode portion 41, a charge accumulation region 4 becoming aphotodiode is composed, as a light receiving portion forphotoelectrically converting an incident light, of an N-type impurityregion.

A positive charge accumulation region 5 is formed on each of surfaces ofthe charge accumulation regions 4 of the respective photodiodes.

Also, the charge accumulation region 4 and the positive chargeaccumulation region 5 compose the HAD structure previously stated.

In the photodiode portion 41, gate electrodes 11 of MOS transistors Tr1are formed below the respective charge accumulation regions 4 of thesilicon substrate 2, and wiring layers 12 made from metallic wirings areformed further below the respective charge accumulation region 4 of thesilicon substrate 2. FIG. 1 shows the wiring layers 12 of three layers.An interface insulating layer 13 insulates between the gate electrode 11and the uppermost wiring layer 12, between the uppermost wiring layer 12and the middle wiring layer 12, and between the middle wiring layer 12and the lowermost wiring layer 12.

It is noted the insulating layer 13 is supported by a supportingsubstrate (not shown) provided downward.

Pixels are respectively composed of the photodiodes having therespective charge accumulation regions 4.

Each of the pixels is structured so as to have one or more transistorsincluding a transistor (a transfer transistor for reading out andtransferring the charges accumulated in the corresponding one of thecharge accumulation regions 4 in this case) Tr1.

Each adjacent two charge accumulation regions 4 of the pixels areisolated by a P-type isolation region 3.

It should be noted that although not illustrated, preferably, a p⁺-typesemiconductor region is formed in an interface, of the chargeaccumulation region 4, on the side of the gate electrode 11 of thetransistor Tr1, thereby suppressing generation of a dark current in theinterface between the charge accumulation region 4 and the insulatinglayer 13.

MOS transistors Tr2 and Tr3 each composed of either an N-channel MOStransistor or a P-channel MOS transistor are formed in a peripheralcircuit portion 42.

Source and drain regions (not shown) of the MOS transistors Tr2 and Tr3,and a semiconductor well region (not shown) becoming channels of the MOStransistors Tr2 and Tr3 are formed in the silicon substrate 2.

A film 22 having negative fixed charges is formed in an upper layerrelative to the silicon substrate 2 having the photodiodes formedtherein. An oxide selected from the group including of HfO₂, ZrO₂,Al₂O₃, TiO₂, and Ta₂O₅, for example, is given as the material for thefilm 22 having the negative fixed charges contained therein. Inaddition, any of the nitrides, the oxynitrides, the oxides of the rareearth elements, and the like can also be used as the material for thefilm 22 having the negative fixed charges contained therein.

An electric field is applied to the surface of the charge accumulationregion 4 owing to the presence of the negative fixed charges containedin the film 22 having the negative fixed charges, thereby forming apositive charge accumulation region (hole accumulation region) 5 in thesurface of the charge accumulation region 4. As a result, the positivecharge accumulation region 5 can be formed even when no ion is implantedinto the surface of the charge accumulation region 4.

An insulating film 6, for example, made from a SiO₂ film is formed onthe film 22 having the negative fixed charges contained therein.

A light blocking film 7 is formed on the insulating film 6 so as tocover a part of the photodiode portion 41, and the peripheral circuitportion 42.

A region in which a light is made incident to none of the photodiodes(optical block region (not shown)) is formed by the light blocking film7, thereby making it possible to determine a black level in an image inaccordance with outputs from the respective photodiodes.

In the peripheral circuit portion 42, a fluctuation of thecharacteristics of the MOS transistors Tr2 and Tr3, and the like causedby incidence of the light can be suppressed by the light blocking film7.

A planarizing film 8 is formed so as to cover each of the SiO₂ film 6and the light blocking film 7.

Color filters 9 having respective colors (red (R), green (G) and blue(B)) are formed every pixel on the planarizing film 8.

On-chip lenses 10 for light-condensing are provided on the color filters9, respectively.

By adopting such a structure, with the CMOS solid-state image pickupelement 1 of the embodiment, a light is made incident from an upper sideof FIG. 1 to cause photoelectric conversion in each of the chargeaccumulation regions 4 of the respective photodiodes, thereby making itpossible to receive and detect the incident light.

Also, the CMOS solid-state image pickup element 1 has a so-called backsurface radiation type structure because the light is made incident toan upper layer on the side (back surface side) opposite to the side(front surface side) of the wiring layers 12 lying in the lower layerwhen viewed from the silicon substrate 2 having the photodiodes formedtherein.

In addition, in the CMOS solid-state image pickup element 1 of theembodiment, in particular, a low-temperature plasma silicon oxide film(SiO₂ film) 21 formed by using low-temperature plasma is formed betweeneach of the positive charge accumulation regions 5 on the surface of thesilicon substrate 2, and the low-temperature plasma silicon oxide film(SiO₂ film) 21.

The provision of the film 22 having the negative fixed charges containedtherein in the upper layer relative to the silicon substrate 2 resultsin that the band is bent similarly to the case of the related art shownin FIGS. 15A and 15B, thereby making it possible to accumulate thepositive charges (holes) in the neighborhood of the interface of thesilicon substrate 2.

It is noted that when HfO₂, Ta₂O₅, TiO₂ or the like, having a relativelyhigh refractive index is especially formed as the film 22 having thenegative fixed charges contained therein, it is also possible to obtainan antireflection effect.

Moreover, the low-temperature plasma silicon oxide film 21 is formedbetween each of the positive charge accumulation regions 5 on thesurface of the silicon substrate 2, and the film 22 having the negativefixed charges contained therein, thereby making it possible to suppressthe tunneling of the electrons trapped. In addition, the low-temperatureplasma silicon oxide film 21 has the negative fixed charges because itis formed by using the plasma.

A method with which the plasma can be generated at the low temperature,for example, a method using the DPS system previously stated, or thelike can be adopted as a method of depositing the low-temperature plasmasilicon oxide film 21.

For the purpose of obtaining the effect of suppression of the tunnelingof the electrons to a certain extent, preferably, a thickness of thelow-temperature plasma silicon oxide film 21 is set as 1 nm or more.More specifically, the thickness of the low-temperature plasma siliconoxide film 21 is set as 3 nm or more so that the sufficient effect ofsuppression of the tunneling of the electrons is obtained.

The effect of suppression of the tunneling of the electrons isstrengthened as the thickness of the silicon oxide film 21 is increased.However, when the thickness of the silicon oxide film 21 is made toothick, the effect of accumulation of the positive charges (holes) owingto the negative fixed charges is weakened. From this viewpoint,preferably, the thickness of the silicon oxide film 21 is set as 30 nmor less.

<3. Method of Manufacturing Solid-State Image Pickup Element>

Next, a method of manufacturing the CMOS solid-state image pickupelement 1 according to another embodiment of the present invention willbe described in detail with reference to FIGS. 2 to 9.

The description will now be started with a state in which as shown inFIG. 2, the charge accumulation regions 4 are formed in the siliconsubstrate 2 in the photodiode portion 41, and the gate electrodes 11 ofthe respective MOS transistors Tr1, Tr2 and Tr3, and the wiring layers12 are formed in the photodiode portion 41 and in the peripheral circuitportion 42.

Firstly, as shown in FIG. 3, the low-temperature plasma silicon oxidefilm 21 is formed on the silicon substrate 2 having the chargeaccumulation regions 4 formed therein. Specifically, for example, theSiO₂ film is formed at the room temperature by carrying out the plasmaprocessing.

Preferably, the thickness of the low-temperature plasma silicon oxidefilm 21 is set as 1 nm or more. More specifically, the thickness of thelow-temperature plasma silicon oxide film 21 is set as 3 nm or more.

Next, as shown in FIG. 4, the film 22 having the negative fixed chargescontained therein is formed on the low-temperature plasma silicon oxidefilm 21. An oxide selected from the group including of HfO₂, ZrO₂,Al₂O₃, TiO₂, and Ta₂O₅, for example, is given as the material for thefilm 22 having the negative fixed charges contained therein.

The ALD method, the MOCVD method or the PVD method, for example, is usedas the method of depositing the film 22 having the negative fixedcharges contained therein.

When the film 22 having the negative fixed charges contained therein isdeposited by utilizing the ALD method, the deposition condition, forexample, is set in such a way that the substrate temperature for thefilm deposition is in the range of 200 to 500° C., the flow rate of theprecursor is in the range of 10 to 500 sccm, the radiation time periodfor the precursor is in the range of 1 to 15 seconds, and the flow rateof O₃ is in the range of 10 to 500 sccm.

Also, when the film 22 having the negative fixed charges containedtherein is deposited by utilizing the PVD method, the depositioncondition, for example, is set in such a way that the pressure is in therange of 0.01 to 50 Pa, the D.C. power is in the range of 500 to 2,000W, the flow rate of Ar is in the range of 5 to 50 sccm, and the flowrate of O₂ is in the range of 5 to 50 sccm.

The film 22 having the negative fixed charges contained therein isformed on the low-temperature plasma silicon oxide film 21, therebyforming the positive charge accumulation region 5 on each of thesurfaces of the charge accumulation regions 4.

Next, as shown in FIG. 5, the insulating film 6 made from the SiO₂ filmor the like is formed on the film 22 having the negative fixed chargescontained therein.

Formation of the insulating film 6 results in that the surface of thefilm 22 having the negative fixed charges contained therein can beprevented from being directly exposed to the etching in the lateretching for the light blocking film 7. In addition, it is possible tosuppress a reaction between the film 22 having the negative fixedcharges contained therein and the light blocking film 7 resulting fromthat the film 22 having the negative fixed charges contained therein andthe light blocking film 7 are made to directly contact each other.

Next, as shown in FIG. 6, the metallic film becoming the light blockingfilm 7 is formed on the insulating film 6.

In addition, as shown in FIG. 7, the upper portions of the lightblocking film 7 and the insulating film 6 are processed by carrying outthe etching. As a result, the light blocking film 7 is left on the partof the photodiode portion 41, and the peripheral circuit portion 42.

Next, as shown in FIG. 8, the planarizing film 8 is formed so as tocover the surface of the part of the photodiode portion 41, and thesurface of the remaining light blocking film 7. The SiO₂ film, forexample, is formed as the planarizing film 8 by utilizing theapplication method. The planarizing film 8 is formed so as to have asufficient thickness, whereby the surface can be planarized by removinga stepped portion formed between the insulating film 6 and the remaininglight blocking film 7.

Finally, as shown in FIG. 9, in the photodiode portion 41, the colorfilters 9 and the on-chip lenses 10 are formed in this order above thephotodiodes of the respective pixels.

It is noted that for the purpose of preventing the processing damage tothe color filters 9 during the lens processing, a light transmissiveinsulating film (not shown) may be formed between the color filters 9and the on-chip lenses 10.

In such a manner, the CMOS solid-state image pickup element 1 shown inFIG. 1 can be manufactured.

According to the structure of the CMOS solid-state image pickup element1 shown in FIG. 1 of the embodiment, the film 22 having the negativefixed charges contained therein is formed on the silicon substrate 2,having the charge accumulation regions 4 formed therein, in thephotodiode portion 41 through the low-temperature plasma silicon oxidefilm 21.

The low-temperature plasma silicon oxide film 21 has the negative fixedcharges contained therein because it is formed by using the plasma. Forthis reason, the sufficient negative bias effect is obtained incombination of the two films of the silicon oxide film 21 and the film22 having the negative fixed charges contained therein. Thus, the bandcan be bent similarly to the case of the related art shown in FIGS. 15Aand 15B owing to the presence of the negative fixed charges contained inthe silicon oxide film 21 and the film 22 having the negative fixedcharges. As a result, each of the positive charge accumulation regions 5is formed in the neighborhood of the interface of the silicon substrate2 so that the positive charges (holes) are accumulated in each of thepositive charge accumulation regions 5, thereby making it possible tosuppress the generation of the dark current caused by the interfacestates.

In addition, since the low-temperature plasma silicon oxide film 21 isformed as the base of the film 22 having the negative fixed charges, thelow-temperature plasma silicon oxide film 21 can prevent the siliconsubstrate 2 from being damaged in forming the film 22 having thenegative fixed charges.

As a result, unlike the case of the related art described in PatentDocument 2, the same oxide materials do not have to be laminated byutilizing the different two film deposing method, and thus therestrictions of the method of depositing the film 22 having the negativefixed charges contained therein, and the material for the film 22 arerelaxed.

Therefore, according to the embodiment of the present invention, it ispossible to suppress the generation of the dark current caused by theinterface states in accordance with the effect of the negative biashaving the sufficient magnitude. Therefore, it is possible to realizethe solid-state image pickup element 1 which has the high reliability,and which operates stably without generating the dark current. Inaddition, the restrictions of the method of depositing the film 22having the negative fixed charges contained therein, and the materialfor the film 22 are relaxed. Thus, the restriction of thecharacteristics of the film 22 having the negative fixed charges is alsorelaxed.

It should be noted that a charge accumulation region composing thephotodiode can also be formed in a silicon epitaxial layer on a siliconsubstrate instead of forming the charge accumulation region 4 composingthe photodiode in the silicon substrate 2 shown in FIG. 1.

In addition, it should be noted that the structure of the upper layersrelative to the film 22 having the negative fixed charges containedtherein, and the structure of the peripheral circuit portion 42 are byno means limited to those in the embodiment described above, and thusvarious changes thereof can be made.

For example, it is also possible to adopt the structure described as anembodiment in Patent Document 2.

Although the embodiment described above corresponds to the case wherethe present invention is applied to the CMOS solid-state image pickupelement, the present invention can also be applied to a solid-stateimage pickup element having any other suitable structure.

For example, the present invention can also be applied to a CCDsolid-state image pickup element. In this case, a silicon oxide filmformed by using the plasma, and a film having negative fixed charges areformed in order on a light receiving portion, thereby making it possibleto suppress the generation of the dark current caused by the interfacestates.

In addition, the embodiment described above corresponds to the casewhere the present invention is applied to the CMOS solid-state imagepickup element having the back surface radiation type structure.

However, the present invention can also be applied to a solid-stateimage pickup element having a so-called surface radiation type structurein which wiring layers and transfer electrodes are formed on a side, ofa semiconductor layer having photodiodes formed therein, to which alight is made incident.

<4. Experiments (Measurements about Characteristics)>

Here, the HfO₂ film was formed as the insulating film having thenegative fixed charges on the SiO₂ film formed by carrying out theplasma processing similarly to the case of the CMOS solid-state imagepickup element 1 shown in FIG. 1, and the characteristics of theresulting lamination structure were checked.

MOS capacitors in each of which an electrode layer was formed on asilicon substrate through an insulating layer were manufactured as TestElement Groups (TEGs) for measurements about the characteristics.

Also, the TEGs using the following lamination structures weremanufactured as the insulating layers of the MOS capacitors.

(1) The SiO₂ film was formed so as to have a thickness of 2 nm by usingthe plasma, and the HfO₂ film was formed so as to have a thickness of 50nm by utilizing the PVD method.

(2) The SiO₂ film was formed so as to have a thickness of 3 nm by usingthe plasma, and the HfO₂ film was formed on the SiO₂ film so as to havea thickness of 50 nm by utilizing the PVD method.

(3) One HfO₂ film was formed so as to have a thickness of 11 nm byutilizing the ALD method, and the other HfO₂ film was formed on the oneHfO₂ film so as to have a thickness of 50 nm by utilizing the PVDmethod.

C-V measurements were carried out with respect to the TEGs thusmanufactured.

FIG. 10 shows a relationship between a gate voltage V_(g) (V) and acapacitance (pF) as the measurement results.

It is understood from the measurement results shown in FIG. 10 that thesame degree or more of a relatively large flat band voltage is obtainedin the case where the SiO₂ film was formed by using the plasma so as tohave the thickness of 3 nm, and the HfO₂ film was formed on the SiO₂film than in the case of the HfO₂ films formed in combination ofutilization of the ALD method and the PVD method.

In addition, it is also understood that although the flat band voltagebecomes smaller in the case where the thickness of the SiO₂ film formedby carrying out the plasma processing was 2 nm than in the case wherethe thickness of the SiO₂ film formed by carrying out the plasmaprocessing was 3 nm, in the case where the thickness of the SiO₂ filmformed by carrying out the plasma processing was 2 nm, the positive flatband voltage is obtained and the lamination structure has the negativefixed charges.

Next, FIG. 11 shows a relationship, between the thickness of the SiO₂film formed by carrying out the plasma processing, and the flat bandvoltage V_(fb), which are plotted based on the measurement results shownin FIG. 10.

As shown in FIG. 11, it is thought that a value of the flat band voltageV_(fb) depends on the thickness of the SiO₂ film, and thus the flat bandvoltage V_(fb) becomes large as the thickness of the SiO₂ film islarger.

It is noted that the HfO₂ film was formed on the SiO₂ film having thethickness of 8.5 nm and formed through thermal oxidation so as to havethe thickness of 50 nm by utilizing the PVD method, therebymanufacturing a TEG as a comparative example. The C-V measurement wascarried out with respect to this TEG as well, and as a result, althoughnot illustrated, the flat band voltage did not become the positivevoltage, and thus the negative fixed charges were not obtained.

Therefore, when the SiO₂ film is formed by using the plasma, thelamination structure in which the HfO₂ film is formed on the SiO₂ filmhas the negative fixed charges.

<5. Image Pickup Apparatus>

Next, an image pickup apparatus according to still another embodiment ofthe present invention will be described in detail with reference to FIG.12.

FIG. 12 is a schematic block diagram showing a configuration of theimage pickup apparatus according to the still another embodiment of thepresent invention.

A video camera, a digital still camera, a camera of a mobile phone, orthe like, for example, is given as the image pickup apparatus of thestill another embodiment.

As shown in FIG. 12, the image pickup apparatus 500 has an image pickupportion 501 including a solid-state image pickup element (not shown). Animaging optical system 502 for condensing an incident light to image animage corresponding to the incident light is provided in a precedingstage of the image pickup portion 501. In addition, a signal processingportion 503 having a drive circuit for driving the image pickup portion501, a signal processing circuit for processing a signal obtainedthrough photoelectric conversion in the image pickup element into animage signal, and the like is connected to a subsequent stage of theimage pickup portion 501. In addition, the image signal obtained throughthe processing executed in the signal processing portion 503 can bestored in an image storage portion (not shown).

In the image pickup apparatus 500 of the still another embodiment of thepresent invention, the CMOS solid-state image pickup element 1 of theembodiment previously described with reference to FIG. 1 is used as thesolid-state image pickup element.

According to the image pickup apparatus 500 of the still anotherembodiment, there is an advantage that an image of high grade can berecorded because of use of the CMOS solid-state image pickup element 1in which the generation of the dark current is suppressed in accordancewith the sufficient negative bias effect.

It should be noted that the image pickup apparatus of the presentinvention is by no means limited to the configuration shown in FIG. 12,and thus the present invention can be applied to the image pickupapparatus as long as the image pickup apparatus uses the image pickupelement of the present invention.

For example, the image pickup element may have a form which is formed asone chip or may also have a module-like form which has an image pickupfunction, and into which the image pickup portion, and the signalprocessing portion or the optical system are collectively packaged.

The image pickup apparatus of the present invention, for example, can beapplied to various kinds of image pickup apparatuses such as a cameraand a mobile apparatus having an image pickup function. In addition, thewording “the image pickup apparatus” includes a fingerprint detectingapparatus or the like as well in the wide sense.

The present invention is by no means limited to the embodimentsdescribed above, and thus various constitutions may also be adoptedwithout departing from the gist of the present invention.

The present application contains subject matter related to thatdisclosed in Japanese Priority Patent Application JP 2009-051208 filedwith the Japan Patent Office on Mar. 4, 2009, the entire content ofwhich is hereby incorporated by reference.

What is claimed is:
 1. A method of manufacturing a solid-state imagepickup element, the method comprising the steps of: forming a photodiodein a silicon substrate; forming a silicon oxide film onto saidphotodiode, a plasma being used to form said silicon oxide film; andforming a first film onto said silicon oxide film, said silicon oxidefilm being in physical contact with said photodiode and said first film,wherein said first film is an oxide of a metal, an oxynitride of themetal, a nitride of the metal, or an oxide of a rare earth element. 2.The method according to claim 1, wherein said plasma is alow-temperature plasma.
 3. The method according to claim 1, wherein anatomic layer deposition method or a metal organic chemical vapordeposition method is used to form said first film.
 4. The methodaccording to claim 1, further comprising: depositing a second film ontosaid first film, said second film being another silicon oxide film. 5.The method according to claim 1, wherein a physical vapor depositionmethod is used to deposit said second film.
 6. The method according toclaim 4, further comprising: forming a light blocking film on saidsecond film, said light blocking film being over a peripheral circuitportion of the silicon substrate.
 7. The method according to claim 1,wherein said metal is from the group consisting of hafnium, zirconium,aluminum, titanium, and tantalum.
 8. The method according to claim 1,wherein said rare earth element is from the group consisting oflanthanum, praseodymium, cerium, neodymium, promethium, samarium,europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium,ytterbium, lutetium, and yttrium.